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Results 1 to 25 of 129

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Effect of the magnetic field on the gaps of MgB2 : A directional point-contact studyDAGHERO, D; GONNELLI, R. S; UMMARINO, G. A et al.The Journal of physics and chemistry of solids. 2006, Vol 67, Num 1-3, pp 424-427, issn 0022-3697, 4 p.Conference Paper

Angular dependence of the order-disorder transition in proton irradiated single crystal MgB2MOORE, J. D; PERKINS, G. K; CAPLIN, A. D et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 22, pp 224509.1-224509.5, issn 1098-0121Article

MgB2 and Mg1-xAlxB2 single crystals: high pressure growth and physical propertiesKARPINSKI, J; KAZAKOV, S. M; JUN, J et al.Physica. C. Superconductivity. 2004, Vol 408-10, pp 81-82, issn 0921-4534, 2 p.Conference Paper

Pinning induced magnetostriction in superconductive MgB2 ceramicsBUKHANTSEV, Yu; KUNDYS, B; NABIALEK, A et al.Physica status solidi. A. Applied research. 2003, Vol 196, Num 1, pp 82-85, issn 0031-8965, 4 p.Conference Paper

Reversible and irreversible properties of superconducting MgB2ZEHETMAYER, M; EISTERER, M; WEBER, H. W et al.Physica. C. Superconductivity and its applications. 2003, Vol 388-89, pp 159-160, 2 p.Conference Paper

Magnetostriction in superconducting MgB2NABIALEK, A; KUNDYSA, B; BUKHANTSEV, Yu et al.Physica. B, Condensed matter. 2002, Vol 319, Num 1-4, pp 286-292, issn 0921-4526Article

Infrared and photoluminescence studies on silicon oxide formation in oxygen-implanted silicon annealed under enhanced pressureSURMA, B; BRYJA, L; MISIUK, A et al.Crystal research and technology (1979). 2001, Vol 36, Num 8-10, pp 943-952, issn 0232-1300Conference Paper

Distribution function for the activation volume of the discontinuous precipitation reaction in the Cu - 7.5 at.% In alloyZENOTCHKIN, M; KOLESNIKOV, D; JUN, J et al.Materials science forum. 1999, pp 605-608, issn 0255-5476, isbn 0-87849-823-0Conference Paper

Dependence of photoluminescence of silicon on conditions of pressure-annealingMISIUK, A; SURMA, H. B; JUN, J et al.Journal of alloys and compounds. 1999, Vol 286, Num 1-2, pp 258-264, issn 0925-8388Conference Paper

Structural characterization of bulk GaN crystals grown under high hydrostatic pressureLILIENTAL-WEBER, Z; KISIELOWSKI, C; RUVIMOV, S et al.Journal of electronic materials. 1996, Vol 25, Num 9, pp 1545-1550, issn 0361-5235Article

Destruction of the gap in the intermediate valence compound SmB6 by neutron irradiationMORILLO, J; DE NOVION, C.-H; JUN, J et al.Solid state communications. 1983, Vol 48, Num 4, pp 315-319, issn 0038-1098Article

The structure and photoluminescence properties of TiO2-coated ZnS nanowiresJUN, J; JIN, C; KIM, H et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 4, pp 813-818, issn 0947-8396, 6 p.Article

A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodesJUN, J; CHOU, B; KANG, B. S et al.Solid-state electronics. 2007, Vol 51, Num 7, pp 1018-1022, issn 0038-1101, 5 p.Article

Anisotropy and internal-field distribution of MgB2 in the mixed state at low temperaturesANGST, M; DI CASTRO, D; KARPINSKI, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 22, pp 224513.1-224513.5, issn 1098-0121Article

Magnetic field dependence of the reversible mixed-state properties of superconducting MgB2 single crystals and the influence of artificial defectsZEHETMAYER, M; EISTERER, M; JUN, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 21, pp 214516.1-214516.12, issn 1098-0121Article

Comparison of measured optical image profiles of silicon lines with two different theoretical modelsSILVER, R; ATTOTA, R; STOCKER, M et al.SPIE proceedings series. 2002, isbn 0-8194-4435-9, 2Vol, vol 1, 409-429Conference Paper

Shape memory and pseudoelastic behavior of 51.5%Ni-Ti single crystals in solutionized and overaged stateSEHITOGLU, H; JUN, J; ZHANG, X et al.Acta materialia. 2001, Vol 49, Num 17, pp 3609-3620, issn 1359-6454Article

(Hg, Pb)(Ba, Sr)2Ca2Cu3O8+δsingle crystals : Influence of Sr substitutions on structure, hole concentration in CuO2 planes and irreversibility lineKARPINSKI, J; SCHWER, H; KAZAKOV, S. M et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 421-424, 1Conference Paper

High-pressure synthesis, crystal growth, phase diagrams, structural and magnetic properties of Y2Ba4CunO2n+x, HgBa2Can-1CunO2n+2+δ and quasi-one-dimensional cupratesKARPINSKI, J; MEIJER, G. I; PUZNIAK, R et al.Superconductor science & technology (Print). 1999, Vol 12, Num 9, pp R153-R181, issn 0953-2048Article

Photoluminescence from porous structures prepared by anodization of annealed Cz-SiSURMA, B; WNUK, A; MISIUK, A et al.Crystal research and technology (1979). 1999, Vol 34, Num 5-6, pp 689-697, issn 0232-1300Article

Electron density distribution of wurtzite-type gallium nitride by maximum Entropy MethodIKEDA, T; TAKATA, M; SAKATA, M et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 12, pp 4104-4109, issn 0031-9015Article

Theoretical approaches of stability ratio on concentrated colloidal dispersed systemJUN, J; BLUM, L; HAOPING, W et al.Colloid and polymer science (Print). 1995, Vol 273, Num 2, pp 175-181, issn 0303-402XArticle

Lattice constants, thermal expansion and compressibility of gallium nitrideLESZCZYNSKI, M; SUSKI, T; PERLIN, P et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4A, pp A149-A153, issn 0022-3727Conference Paper

Effect of disorder on the irreversible magnetic properties of single crystalline MgB2 : comparison of carbon doping and neutron irradiationZEHETMAYER, M; KRUTZLER, C; EISTERER, M et al.Physica. C. Superconductivity. 2006, Vol 445-48, pp 65-68, issn 0921-4534, 4 p.Conference Paper

Carbon substitution in MgB2 single crystals : Structural and superconducting propertiesKAZAKOV, S. M; PUZNIAK, R; ROGACKI, K et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 2, pp 024533.1-024533.10, issn 1098-0121Article

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